View NDB710A_793288.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

May 1994
NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
42 and 40A, 100V. RDS(ON) = 0.038 and 0.042. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design (3 million/in) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C TJ,TSTG TL
TC = 25C unless otherwise noted
NDP710A NDP710AE NDB710A NDB710AE 100 100 20 40 42 168 150 1
NDP710B NDP710BE NDB710B NDB710BE
Units V V V V
40 160
A A W W/C C C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
-65 to 175 275
(c) 1997 Fairchild Semiconductor Corporation
NDP710.SAM
Electrical Characteristics (T
Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy
C
= 25C unless otherwise noted)
Conditions VDD = 25 V, ID = 42 A
Type NDP710AE NDP710BE NDB710AE NDB710BE
Min
Typ
Max 700 42
Units mJ A
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 A VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 21 A ALL ALL TJ = 125C ALL ALL ALL TJ = 125C NDP710A NDP710AE NDB710A TJ = 125C NDB710AE NDP710B NDP710BE NDB710B TJ = 125C NDB710BE NDP710A NDP710AE NDB710A NDB710AE NDP710B NDP710BE NDB710B NDB710BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 21 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 42 2 1.4 2.9 2.2 0.026 0.044 100 250 1 100 -100 4 3.6 0.038 0.08 0.042 0.09 V A mA nA nA V V A
ON CHARACTERISTICS (Note 2)
VGS = 10 V, ID = 20 A
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
40
A
20
28 2840 550 175 3600 700 200
S pF pF pF
Ciss Coss Crss
NDP710.SAM
Electrical Characteristics (T
Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
C
= 25C unless otherwise noted)
Conditions VDD = 50 V, ID = 42 A, VGS = 10 V, RGEN = 5
Type ALL ALL ALL ALL
Min
Typ 15 111 55 81 92 15 44
Max 25 180 90 130 130
Units nS nS nS nS nC nC nC
SWITCHING CHARACTERISTICS (Note 2)
VDS = 80 V, ID = 42 A, VGS = 10V
ALL ALL ALL NDP710A NDP710AE NDB710A NDB710AE NDP710B NDP710BE NDB710B NDB710BE
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 42 A
40
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
NDP710A NDP710AE NDB710A NDB710AE NDP710B NDP710BE NDB710B NDB710BE
168
A
160
A
VSD
(Note 2)
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current
VGS = 0 V, IS = 21 A VGS = 0 V, IS = 42 A, dIS/dt = 100 A/s
ALL TJ = 125C ALL ALL
0.89 0.69 128 8.7
1.3 1.2 180 13
V V ns A
trr Irr RJC RJA
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 1 62.5 C/W C/W
Notes: 1. NDP710A/710B and NDB710A/710B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP710.SAM
Typical Electrical Characteristics
120
V GS = 20V
2.5
12
10
I D , DRAIN-SOURCE CURRENT (A)
R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
100
8.0 7.0
2
V GS = 5V 6.0 7.0 8.0
1.5
80
60
6.0
40
10 12 20
1
20
5.0
0 0 2 4 6 V DS , DRAIN-SOURCE VOLTAGE (V) 8
0.5
0
20
40 60 80 I D , DRAIN CURRENT (A)
100
120
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2.5
2.5
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
2 R DS(on), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I D = 15A V GS = 10V
V
GS
= 10V TJ = 125C
2
1.5
1.5
25C
1
1
-55C
0.5 0 20 40 60 80 I D , DRAIN CURRENT (A) 100 120
0.5 -50
-25
0
25 50 75 100 125 T J , JUNCTION TEMPERATURE (C)
150
175
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
60
1.2
J
GATE-SOURCE THRESHOLD VOLTAGE (V)
V DS = 10V
50 I D, DRAIN CURRENT (A)
T
= -55C
25 125
V DS = V
1.1 1 0.9 0.8 0.7 0.6 0.5 -50
GS
I
D
= 250A
40
30
20
10
0 2 3 V
GS
Vth , NORMALIZED
4
5
6
7
-25
0
, GATE TO SOURCE VOLTAGE (V)
25 50 75 100 125 T J , JUNCTION TEMPERATURE (C)
150
175
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
NDP710.SAM
Typical Electrical Characteristics (continued)
1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
30
I
1.1
D
= 250A
I , REVERSE DRAIN CURRENT (A) 10
V GS = 0V TJ = 125C 25C -55C
1
BV DSS , NORMALIZED
1.05
1
0.95
0.1
0.9 -50
-25
0 T
J
25 50 75 100 125 , JUNCTION TEMPERATURE (C)
150
175
S
0.01 0.2
0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Current and Temperature.
20
6000 , GATE-SOURCE VOLTAGE (V)
I D = 42A
3000 2000 CAPACITANCE (pF)
V DS = 20V
50 80
C iss
15
1000
10
C oss
300 200
5
V GS = 0 V
0.2
V 0 0
C rss
100 0.1
GS
f = 1 MHz
0.5 1 2 5 10 20 VDS , DRAIN TO SOURCE VOLTAGE (V)
50
40
80 Q g , GATE CHARGE (nC)
120
160
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VDD
t d(on)
t on tr
90%
t off t d(off)
90%
tf
VIN
D
RL V OUT
DUT
Output, Vout
VGS
10%
10% 90%
R GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 36. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP710.SAM
Typical Electrical Characteristics (continued)
50 , TRANSCONDUCTANCE (SIEMENS)
VDS = 10V
40
VGS = 10V
T J = -55C 25C 125C
L tp
+ VDD -
30
20
t p is adjusted to reach the desired peak inductive current, I L . tp IL
BV DSS
10
FS
VDD
g 0 0 10 20 30 40 ID , DRAIN CURRENT (A) 50 60
Figure 13. Transconductance Variation with Drain Current and Temperature.
Figure 14. Unclamped Inductive Load Circuit and Waveforms.
300
100 I , DRAIN CURRENT (A) 50
RD
S(
) ON
Lim
it
10 10 1m 10 10 ms s 0
s
s
10 5 2 1 0.5 1 2 3
0m DC s
V GS = 20V SINGLE PULSE T C = 25C
D
5 10 20 50 V DS , DRAIN-SOURCE VOLTAGE (V))
100 150
Figure 15. Maximum Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.3
0.2 D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.1
R JC (t) = r(t) * RJC R JC = 1.0 C/W
0.1
0.05 P(pk)
0.05 0.03
0.02 0.01
t1
t2
0.02
Single Pulse
TJ - T C = P * R JC (t) Duty Cycle, D = t 1 /t2 0.1 0.2 0.5 1 2 5 t 1 ,TIME (ms) 10 20 50 100 200 500 1000
0.01 0.01
0.02
0.05
Figure 16. Transient Thermal Response Curve.
NDP710.SAM

▲Up To Search▲

Price & Availability of NDB710A

	To Download NDB710A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .